[1] D Li, H Zong, W Yang, L Feng, J He, W Du, C Wang, Y Xie, Z Yang, B Shen, G Zhang, X Hu. Stimulated emission in GaN-based laser diodes far below the threshold region. OPTICS EXPRESS. 2014, 22(3): 2536. [2] D Li, W Yang, L F Feng, P W Roth, J He, W M Du, Z J Yang, C D Wang, G Y Zhang, X D Hu. Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes. APPLIED PHYSICS LETTERS. 2013, 102(123501). [3] W Yang, D Li, N Y Liu, Z Chen, L Wang, L Liu, L Li, C H Wan, W H Chen, X D Hu, W M Du. Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes. APPLIED PHYSICS LETTERS. 2012, 100(0311053) [4] L F Feng*, Y Li, D Li*, X D Hu, W Yang, C D Wang, Q Y Xing. Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes. APPLIED PHYSICS LETTERS. 2012, 101(233506). [5] L F Feng, D Li, C Y Zhu, C D Wang, H X Cong, G Y Zhang, W M Du. Deep saturation of junction voltage at large forward current of light-emitting diodes. JOURNAL OF APPLIED PHYSICS. 2007, 102(945119). [6] L F Feng, D Li, C Y Zhu, C D Wang, H X Cong, X S Xie, C Z Lu. Simultaneous sudden changes of electrical behavior at the threshold in laser diodes. JOURNAL OF APPLIED PHYSICS. 2007, 102(631026). [7] N Y Liu, D Li, L Wang, L Liu, W Yang, L Li, W Y Cao, C M Lu, C H Wan, W H Chen, X D Hu. Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations. JAPANESE JOURNAL OF APPLIED PHYSICS. 2012, 51(071001). [8] Y Z Wang, D Li, L Li, N Y Liu, L Liu, W Y Cao, W H Chen, X D Hu. Intersubband transitions in Al0.82In0.18N/GaN single quantum well. CHINESE PHYSICS B. 2011, 20(094207). [9] L Li, L Liu, D Li, L Wang, C H Wan, W H Chen, Z J Yang, G Y Zhang, X D Hu, S J Huang, S Chang, J Liu, W Zhang, Y H Xie. Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels. APPLIED PHYSICS EXPRESS. 2012, 5(109201). [10] L Liu, L Wang, D Li, N Y Liu, L Li, W Y Cao, W Yang, C H Wan, W H Chen, W M Du, X D Hu, Z C Feng. Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures. JOURNAL OF APPLIED PHYSICS. 2011, 109(073106). [11] L Wang, R Li, D Li, N Y Liu, L Liu, W H Chen, C D Wang, Z J Yang, X D Hu. Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer. APPLIED PHYSICS LETTERS. 2010, 96(061110). [12] L Wang, R Li, Z W Yang, D Li, T Yu, N Y Liu, L Liu, W H Chen, X D Hu. High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes. APPLIED PHYSICS LETTERS. 2009, 95(211104). [13] R Li, J M Zhang, L Chen, H B Zhao, Z W Yang, T Yu, D Li, Z C Liu, W H Chen, Z J Yang, G Y Zhang, Z Z Gan, X D Hu, Q Y Wei, T Li, F A Ponce. Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure. APPLIED PHYSICS LETTERS. 2009, 94(211103). |